Infineon IRLMS1902TRPBF: A Compact 30V Power MOSFET for High-Efficiency Applications

The demand for compact, efficient power management solutions continues to grow across modern electronics, from portable devices to automotive systems. Addressing this need, the Infineon IRLMS1902TRPBF stands out as a high-performance, Single N-Channel HEXFET Power MOSFET housed in a space-saving SO-8 package. This component is engineered to deliver exceptional switching performance and low power dissipation, making it an ideal choice for a wide range of applications.

One of the most significant advantages of this MOSFET is its low on-state resistance (RDS(on)), which is typically just 7.5 mΩ at a 10V gate drive. This ultra-low resistance minimizes conduction losses, leading to higher efficiency and reduced heat generation in power conversion circuits. Combined with a 30V drain-source voltage (VDS) rating, it is perfectly suited for low-voltage switching applications such as DC-DC converters, power management in battery-operated devices, motor control, and load switching.

The SO-8 package offers a superior footprint compared to standard SOT-23 or larger packages, providing an excellent balance between size and thermal performance. This makes the IRLMS1902TRPBF particularly valuable in space-constrained designs where board real estate is at a premium. Additionally, the MOSFET features fast switching speeds, which help in reducing switching losses in high-frequency circuits, further enhancing overall system efficiency.

Infineon’s advanced HEXFET technology ensures high robustness and reliability, characterized by low gate charge and superior avalanche ruggedness. This technology allows for simpler drive circuit designs while maintaining stable operation under demanding conditions.

ICGOOODFIND: The Infineon IRLMS1902TRPBF is a highly efficient and compact power solution, offering excellent electrical characteristics like low RDS(on) and fast switching in a small SO-8 package, making it a top choice for modern power management designs.

Keywords:

Power MOSFET

Low RDS(on)

SO-8 Package

HEXFET Technology

DC-DC Conversion