High-Performance Power Conversion with the Infineon IPP65R190C7 190mΩ Superjunction MOSFET
The relentless pursuit of higher efficiency, greater power density, and improved reliability in power conversion systems is a defining challenge for modern electronics. From server power supplies and industrial motor drives to renewable energy inverters and fast chargers, the performance of the power switch is paramount. The Infineon IPP65R190C7 190mΩ Superjunction MOSFET stands out as a pivotal component engineered to meet these demanding requirements.
At the heart of this device's superiority is its advanced CoolMOS™ C7 superjunction (SJ) technology. This technology represents a significant leap over traditional planar MOSFETs by enabling an exceptionally low specific on-state resistance (R DS(on)) for a given die size. The IPP65R190C7, with a remarkably low 190mΩ maximum R DS(on) at V GS = 10 V, directly translates to minimized conduction losses. This allows designers to either achieve higher efficiency by reducing wasteful heat generation or increase the power output in a given form factor, pushing the boundaries of power density.
However, efficiency is not solely about conduction. In high-frequency switched-mode power supplies (SMPS), switching losses become a dominant factor. The IPP65R190C7 is meticulously optimized for this reality. It features exceptional switching characteristics, including low gate charge (Q G) and reduced internal capacitances (such as C OSS and C RSS). These traits enable faster switching transitions, which are crucial for operating at higher frequencies. By slashing switching losses, the MOSFET allows for the use of smaller passive components like inductors and capacitors, further contributing to a more compact and cost-effective system design.
Beyond raw performance metrics, robustness and reliability are non-negotiable. The IPP65R190C7 is designed with a high intrinsic body diode with excellent reverse recovery characteristics (Q rr). This hardens the MOSFET against the stressful conditions of inductive switching and is vital for efficiency in bridge topologies like PFC or half-bridges. Furthermore, its high avalanche ruggedness ensures tolerance against voltage spikes and unpredictable transients on the board, enhancing the overall system's field reliability.
The component is offered in the popular TO-220 FullPAK package. This package provides a galvanic isolation between the cooling surface and the tab (drain potential), simplifying the thermal management design process. Designers can mount the heatsink directly without needing an insulating pad, thereby improving thermal impedance and lowering the overall operating temperature, which is critical for long-term reliability.
ICGOODFIND: The Infineon IPP65R190C7 is a benchmark in high-performance power conversion. By masterfully balancing ultra-low conduction losses, superior switching performance, and unwavering robustness, it provides a critical enabling technology for designers to create the next generation of efficient, compact, and reliable power electronics.
Keywords: Superjunction MOSFET, High-Efficiency, Low RDS(on), Fast Switching, Power Density.
