**HMC862ALP3E: A High-Performance GaAs pHEMT MMIC Low-Noise Amplifier for Microwave Applications**
The relentless drive for higher data rates and more sensitive receiving systems in modern microwave electronics places immense importance on the performance of the critical first component in the signal chain: the low-noise amplifier (LNA). The **HMC862ALP3E**, a Gallium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistor (pHEMT) Monolithic Microwave Integrated Circuit (MMIC), stands out as a premier solution designed to meet these stringent demands. This amplifier is engineered to deliver exceptional noise figure and high gain across a broad frequency range, making it an indispensable component for a wide array of advanced applications.
Fabricated using a high-reliability 0.25 µm GaAs pHEMT process, the HMC862ALP3E operates seamlessly from **5 GHz to 20 GHz**, covering the C, X, and Ku bands. Its core strength lies in its outstanding **noise figure of 1.8 dB**, which ensures minimal degradation of the desired signal by introducing very little additional noise itself. This is complemented by a high linearity, with an output third-order intercept point (OIP3) of +26 dBm, allowing it to handle strong interfering signals without compression or distortion. Furthermore, the amplifier provides a substantial **small-signal gain of 17 dB**, which effectively boosts weak signals above the noise floor of subsequent stages in the receiver.
The device is presented in a leadless, RoHS-compliant 3x3 mm LP3 surface-mount package, which is ideal for high-volume automated assembly and compact system design. It requires a single positive supply between +3V and +5V, drawing a nominal current of 68 mA, which simplifies power management. The inclusion of DC-blocking capacitors on both the RF input and output ports further eases integration into a final circuit.
The combination of wide bandwidth, low noise, and high gain makes the HMC862ALP3E exceptionally versatile. It is perfectly suited for use in:
* **Point-to-Point and Point-to-Multi-Point Radios**
* **Military and Commercial Radar Systems**
* **Satellite Communication (SATCOM) Terminals**
* **Electronic Warfare (EW) and Electronic Countermeasures (ECM)**
* **Test and Measurement Equipment**
**ICGOODFIND:** The HMC862ALP3E is a superior GaAs pHEMT MMIC LNA that delivers an exceptional blend of ultra-low noise figure, high gain, and robust linearity across a wide microwave spectrum. Its surface-mount package and simple biasing make it a highly attractive component for designers seeking to maximize receiver sensitivity and dynamic range in the most demanding applications.
**Keywords:** **Low-Noise Amplifier (LNA)**, **GaAs pHEMT**, **Microwave Amplifier**, **High Gain**, **Wideband MMIC**