Infineon IPD95R1K2P7ATMA1: A High-Performance 950V CoolMOS™ P7 Power Transistor

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power conversion systems. Addressing these challenges, Infineon Technologies introduces the IPD95R1K2P7ATMA1, a 950V superjunction MOSFET from its groundbreaking CoolMOS™ P7 family. This device is engineered to set a new benchmark for performance in applications ranging from industrial SMPS and PV inverters to server and telecom power supplies.

At the heart of this transistor's superiority is its revolutionary superjunction technology. The CoolMOS™ P7 platform achieves an unprecedented low specific on-state resistance (R DS(on)) for a given die size. The IPD95R1K2P7ATMA1 boasts a maximum R DS(on) of just 1.2 Ω, which directly translates to minimized conduction losses. This allows designers to either enhance the efficiency of their systems or utilize a smaller form factor without compromising thermal performance, pushing the boundaries of power density.

Beyond low conduction losses, the device excels in dynamic performance. It features exceptionally low gate charge (Q G) and outstanding switching characteristics, which are critical for high-frequency operation. The reduction in both switching and conduction losses enables top-tier efficiency, particularly in hard- and soft-switching topologies like LLC resonant converters and PFC stages. This makes it an ideal choice for high-performance, high-frequency designs aiming to meet stringent energy regulations such as 80 PLUS Titanium.

Reliability is paramount in high-voltage environments. The IPD95R1K2P7ATMA1 is designed with robustness and longevity in mind. It offers a high avalanche ruggedness and an extended safe operating area (SOA), ensuring stable operation under stressful conditions, including voltage spikes and overloads. Its high maximum operating junction temperature (T J = 150°C) provides designers with additional margin for thermal management.

Furthermore, the product is halogen-free and RoHS compliant, aligning with global environmental standards and the industry's move towards more sustainable manufacturing practices.

ICGOOODFIND: The Infineon IPD95R1K2P7ATMA1 represents a significant leap in high-voltage power transistor technology. By masterfully balancing ultra-low R DS(on), superior switching performance, and maximum application robustness, it provides a future-proof solution for designers striving to create the next generation of efficient, compact, and reliable power electronics.

Keywords: CoolMOS™ P7, High Efficiency, Low R DS(on), High Switching Frequency, High Robustness.