Infineon IPB17N25S3-100: High-Performance 250V OptiMOS 5 Power MOSFET

In the realm of power electronics, efficiency, reliability, and thermal performance are paramount. The Infineon IPB17N25S3-100, a 250V N-channel power MOSFET from the advanced OptiMOS™ 5 technology family, stands out as a premier solution designed to meet these demanding requirements. This MOSFET is engineered to deliver exceptional performance in a wide array of applications, from industrial motor drives and solar inverters to server power supplies and welding equipment.

A key highlight of the IPB17N25S3-100 is its extremely low figure-of-merit (R DS(on) x Q G). With a maximum on-state resistance (R DS(on)) of just 17 mΩ at 10 V, it minimizes conduction losses, leading to higher efficiency and reduced heat generation. This is complemented by an outstanding switching performance, facilitated by low gate charge (Q G) and low effective output capacitance (C OSS(eff)). These characteristics are crucial for high-frequency switching operations, allowing for faster switching speeds, reduced switching losses, and the potential for designers to create more compact and higher power-density systems.

The device is housed in the TO-263-7 (D2PAK-7) package, which offers a superior thermal footprint compared to standard packages. This package enhances power dissipation capabilities, enabling the MOSFET to handle high continuous drain current (I D) of up to 100 A. Its robust construction ensures high reliability under strenuous operating conditions. Furthermore, the OptiMOS 5 technology provides a virtually loss-less body diode with excellent reverse recovery characteristics, which is essential for applications involving hard commutation or freewheeling, further boosting overall system efficiency.

Designed with sustainability in mind, this MOSFET helps improve the energy efficiency of end-products, contributing to a lower carbon footprint. Its high performance and robustness make it an ideal choice for designers looking to push the boundaries of power conversion technology.

ICGOODFIND: The Infineon IPB17N25S3-100 is a top-tier 250V power MOSFET that sets a high standard with its superior efficiency, minimal switching losses, and excellent thermal performance, making it an optimal component for next-generation high-power, high-frequency applications.

Keywords: OptiMOS 5 Technology, Low R DS(on), High Switching Performance, TO-263-7 Package, Power Efficiency.