Infineon IPP50R280CE: Advanced 650V CoolMOS™ Power Transistor for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronics demands semiconductors that push the boundaries of performance. The Infineon IPP50R280CE stands at the forefront of this innovation, a 650V CoolMOS™ Power Transistor engineered to meet the rigorous demands of high-efficiency power conversion systems.

As a member of Infineon's renowned CoolMOS™ C7E family, this transistor is built upon a superjunction (SJ) technology platform. This advanced design is the key to its exceptional performance, enabling a significant reduction in both on-state resistance (R DS(on)) and switching losses. The IPP50R280CE boasts an industry-leading low nominal R DS(on) of just 280 mΩ, which directly translates to minimized conduction losses and higher overall system efficiency. This characteristic is paramount in applications where energy savings and thermal management are critical.

Furthermore, the device exhibits excellent switching characteristics, facilitated by its low gate charge (Q G) and optimized internal capacitances. This allows for faster switching frequencies, which enables designers to use smaller passive components like inductors and capacitors. The result is a substantial increase in power density, allowing for more compact and lighter end products without compromising performance.

The 650V voltage rating provides a robust safety margin for operation in universal mains applications (e.g., 230 VAC) and power factor correction (PFC) circuits, enhancing system reliability. It is particularly suited for challenging switch-mode power supply (SMPS) topologies such as active clamp flyback (ACF), quasi-resonant (QR), and full-bridge converters. Its robustness also makes it an ideal choice for industrial motor drives, solar inverters, and EV charging infrastructure.

A critical feature of the CoolMOS™ C7E technology is its integrated fast body diode. This feature ensures superior hard commutation ruggedness, which is essential for handling inductive loads and preventing reverse recovery issues that can lead to device failure. This intrinsic robustness simplifies design and improves the long-term reliability of the power system.

ICGOOODFIND: The Infineon IPP50R280CE is a benchmark in high-voltage power MOSFET technology. By masterfully balancing ultra-low on-resistance with fast switching capabilities and an integrated robust diode, it provides a critical component for engineers aiming to achieve new levels of efficiency and power density in their advanced power supply designs.

Keywords: High-Efficiency, Superjunction Technology, Low R DS(on), Fast Switching, 650V Rating.